Fig. 5
From: Lead halide perovskite sensitized WSe2 photodiodes with ultrahigh open circuit voltages
Optoelectronic properties in graphene-contacted programmable MAPbI3/WSe2 photodiodes. a Schematic illustration of photogenerated carrier extraction in a graphene-contacted MAPbI3/WSe2 photodiode under 532-nm laser illumination. b Optical image of the fabricated graphene-contacted MAPbI3/WSe2 FET. The black and red dashed frames mark the position of a pair of graphene and WSe2. The white scale bar is 10 μm. c, d Gate-tunable output characteristics (IDS-VDS) of the graphene-contacted device after negative lateral poling process measured under dark (c) and 532-nm laser illumination (d) conditions. The inset shows a schematic illustration of the ionic charge profile. e Open circuit voltages (VOC) extracted from the IDS-VDS curves after positive (blue) and negative (red) lateral poling processes. f External quantum efficiency (EQE) extracted from the gate-dependent short circuit current (ISC) measured from negatively poled device under 532-nm laser illumination