Fig. 4
From: Lead halide perovskite sensitized WSe2 photodiodes with ultrahigh open circuit voltages
Polarity-switchable MAPbI3/WSe2 diodes and photodiodes. a Schematic illustrations of as-fabricated MAPbI3/WSe2 device. b, c Schematic illustrations of non-uniform poling processes of resulting ionic charge distribution induced by negative and positive VDS. The electrode on the left-hand side was used as a drain electrode and the other side was grounded. d Output curves (IDS-VDS) of the as-fabricated MAPbI3/WSe2 device. e, f Output curves (IDS-VDS) of the device after sequential lateral poling processes with negative and positive poling VDS. The insets show schematic illustrations of resulting ionic charge profile. The measurements were conducted in dark (blue curve) and 532-nm laser illumination (Power density: 15 W/m2, red curve)