Fig. 3
From: Lead halide perovskite sensitized WSe2 photodiodes with ultrahigh open circuit voltages
Carrier type-switchable MAPbI3/WSe2 FETs. a Schematic illustration of as-fabricated MAPbI3/WSe2 FET. b, c Schematic illustrations of negative and positive back-gate poling process that enriches a net positive or negative ionic charge at MAPbI3/WSe2 interface. d Transfer curves (IDS-VBG) of as-fabricated MAPbI3/WSe2 FET. e, f Transfer curves (IDS-VBG) of MAPbI3/WSe2 FET after negative and positive back-gate poling processes, showing n- and p-channel FET characteristics. The insets show schematic illustrations of resulting ionic charge distribution. Each device was measured at VDS = 5 V under dark condition