Fig. 2

Doping effects in MAPbI₃/WSe₂ heterostructure. a–c Transfer curves (I_DS-V_BG) of WSe₂ FET, MAPbI₃/WSe₂ FET and MAPbI₃ FET measured with A-B, A-B and C-B electrodes where A and C were used as drain electrodes and B was grounded. The insets (left) show schematic illustrations of each device structure. The insets (right) show the optical images of the devices, where the white dashed frames mark the position of WSe₂. The white scale bar is 10 μm. Each device was measured at V_DS = 5 V under dark condition. d Photocurrents (I_ph) of WSe₂ FET, MAPbI₃ FET and MAPbI₃/WSe₂ FET. Each device was measured at V_DS = 5 V under white light illumination condition