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Fig. 2 | eLight

Fig. 2

From: In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor

Fig. 2

Microscopic TA spectroscopy of 2D layered InSe before and after transmutation. a, d Temporally (0–7300 ps) and spectrally (475–770 nm) resolved TA signals of the 2D layered InSe (a) before and (d) after transmutation. Insets are the optical images of the samples (the scale bar is 20 μm). b, c, e, f The kinetic signals at 532 nm (b) and 655 nm (c) for the case of 2D layered InSe before transmutation and the kinetic signals at 532 nm (e) and 655 nm (f) for the case of 2D layered InSe after transmutation

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