Fig. 4

Electrical characteristics and photoresponse of the 2D layered InSe FET before and after transmutation. a Scheme for the 2D layered InSe FET. b Transfer characteristics of the device before and after transmutation, with V_ds = 0.1 V. Inset is the zoom in the image of the transfer curve before transmutation. c The responsivity at 1 V bias of the devices before and after transmutation under the illumination of lasers at different wavelengths (405, 532, 655, 808, and 1064 nm) with the intensity of 102 mW cm⁻². d Time response (R: rise time, F: fall time) of the device before and after transmutation at 1 V bias illuminated by the pulse signal at various wavelengths