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Fig. 1

From: In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor

Fig. 1

The schematic of the neutron transmutation doping of InSe and the characterizations of Sn-InSe. a Transmutation doping scheme for the 2D layered InSe, including the capture of thermal neutrons and decay of γ and β− particles. b Atomic-resolution HAADF-STEM image of the Sn-InSe. c The intensity profile taken from the red dashed line marked in b. d Raman spectrum (excited by 532 nm laser) of 2D layered InSe sample before and after transmutation

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